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2SB936A Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SB936A Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power Transistors 2SB936, 2SB936A Silicon PNP epitaxial planar type For low-voltage switching s Features q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –40 –50 –20 –40 –5 –20 –10 40 1.3 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SB936 2SB936A 2SB936 2SB936A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 hFE2 * VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz IC = –3A, IB1 = – 0.1A, IB2 = 0.1A min –20 –40 45 90 typ 100 400 0.1 0.5 0.1 max –50 –50 –50 260 – 0.6 –1.5 Unit µA µA V V V MHz pF µs µs µs 2SB936 2SB936A 2SB936 2SB936A *h FE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5 ±0.2 6.0 ±0.5 1.5max. 0.8 ±0.1 5.08 ±0.5 2.54 ±0.3 1.1max. 0.5max. 1.0 ±0.1 3.4 ±0.3 2 13 Unit: mm 8.5 ±0.2 6.0 ±0.3 3.4 ±0.3 2.54 ±0.3 5.08 ±0.5 1.0 ±0.1 0.8 ±0.1 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS) |
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