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IXTY14N60X2 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTY14N60X2 Datasheet(HTML) 2 Page - IXYS Corporation |
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2 / 7 page 
IXTY14N60X2 Littelfuse reserves the right to change limits, test conditions and dimensions. Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25C, Unless Otherwise Specified) Min. Typ. Max I S V GS = 0V 14 A I SM Repetitive, pulse Width Limited by T JM 56 A V SD I F = IS, VGS = 0V, Note 1 1.4 V t rr 320 ns Q RM 4.3 µC I RM 27.0 A I F = 7A, -di/dt = 100A/µs V R = 100V Symbol Test Conditions Characteristic Values (T J = 25C, Unless Otherwise Specified) Min. Typ. Max g fs V DS = 10V, ID = 0.5 • ID25, Note 1 7 12 S R Gi Gate Input Resistance 5 C iss 740 pF C oss V GS = 0V, VDS = 25V, f = 1MHz 1310 pF C rss 20 pF C o(er) 55 pF C o(tr) 160 pF t d(on) 23 ns t r 27 ns t d(off) 75 ns t f 17 ns Q g(on) 16.7 nC Q gs V GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 4.7 nC Q gd 7.7 nC R thJC 0.69 C/W Resistive Switching Times V GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 R G = 30 (External) Effective Output Capacitance Energy related Time related V GS = 0V V DS = 0.8 • VDSS |
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