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RU30P5H Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Part No. RU30P5H
Description  P-Channel 30 V (D-S) MOSFET
Download  8 Pages
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU30P5H Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  RU30P5H Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd RU30P5H Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd RU30P5H Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd RU30P5H Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd RU30P5H Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd RU30P5H Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd RU30P5H Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd RU30P5H Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
15
30
45
60
0
3
6
9
12
15
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 5 V
4 V
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0
102030
405060
ID - Drain Current (A)
VGS = 4.5 V
VGS = 10 V
0
2
4
6
8
10
0
1020304050
Qg - Total Gate Charge (nC)
VDS = 15 V, ID = 14.4 A
VDS = 24 V, ID = 14.4 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.3
0.6
0.9
1.2
01234
VGS - Gate-to-Source Voltage (V)
25 ºC
125 ºC
- 55 ºC
0
600
1200
1800
2400
3000
3600
0
6
12
18
24
30
VDS - Drain-Source Voltage (V)
Ciss
Coss
Crss
0.6
0.9
1.2
1.5
1.8
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (ºC)
ID = 14.4 A
VGS = 10 V
VGS = 4.5 V
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU30P5H
3


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