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RU30P5H Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part No. RU30P5H
Description  P-Channel 30 V (D-S) MOSFET
Download  8 Pages
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU30P5H Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
TJ = 150 ºC
TJ = 25 ºC
1.2
1.4
1.6
1.8
2.0
2.2
2.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Temperature (ºC)
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
VGS - Gate-to-Source Voltage (V)
024
6
8
10
12
14
16
18
20
TJ = 25 ºC
TJ = 125 ºC
0
10
20
30
40
50
0.01
0.1
1.0
10
100
1000
Time (s)
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
0.1
1
10
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is Specified
TA = 25 ºC
Single Pulse
1 ms
DC
10 s
100 ms
10ms
1 s
Limited by RDS(on)*
100 µs
BVDSS Limited
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU30P5H
4


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