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RU30L30M3 Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Part No. RU30L30M3
Description  P-Channel 30 V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU30L30M3 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
t
≤ 10 s
RthJA
26
33
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.9
2.4
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 30
V
VDS Temperature Coefficient
ΔVDS/TJ
ID = - 250 µA
- 20
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.5
- 2.8
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 10 V
- 20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 14.4 A
0.0075
Ω
VGS = - 4.5 V, ID = - 11.5 A
0.0105
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 14.4 A
37
S
Dynamicb
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
2230
3345
pF
Output Capacitance
Coss
385
578
Reverse Transfer Capacitance
Crss
322
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 14.4 A
47.5
71
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 14.4 A
24.6
37
Gate-Source Charge
Qgs
7.7
Gate-Drain Charge
Qgd
12
Gate Resistance
Rg
f = 1 MHz
0.4
1.8
3.6
Ω
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
50
75
ns
Rise Time
tr
43
65
Turn-Off DelayTime
td(off)
30
45
Fall Time
tf
14
21
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
14
21
Rise Time
tr
918
Turn-Off DelayTime
td(off)
36
54
Fall Time
tf
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 35e
A
Pulse Diode Forward Currenta
ISM
- 60
Body Diode Voltage
VSD
IF = - 10 A
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
31
47
ns
Body Diode Reverse Recovery Charge
Qrr
30
45
nC
Reverse Recovery Fall Time
ta
15
ns
Reverse Recovery Rise Time
tb
16
0.0085
0.012
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU30L30M3
2


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