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RU30L30M3 Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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RU30L30M3 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
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2 / 8 page 
Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t ≤ 10 s RthJA 26 33 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 20 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ 5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.5 - 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 14.4 A 0.0075 Ω VGS = - 4.5 V, ID = - 11.5 A 0.0105 Forward Transconductancea gfs VDS = - 15 V, ID = - 14.4 A 37 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 2230 3345 pF Output Capacitance Coss 385 578 Reverse Transfer Capacitance Crss 322 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 14.4 A 47.5 71 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 14.4 A 24.6 37 Gate-Source Charge Qgs 7.7 Gate-Drain Charge Qgd 12 Gate Resistance Rg f = 1 MHz 0.4 1.8 3.6 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 50 75 ns Rise Time tr 43 65 Turn-Off DelayTime td(off) 30 45 Fall Time tf 14 21 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 14 21 Rise Time tr 918 Turn-Off DelayTime td(off) 36 54 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 35e A Pulse Diode Forward Currenta ISM - 60 Body Diode Voltage VSD IF = - 10 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 31 47 ns Body Diode Reverse Recovery Charge Qrr 30 45 nC Reverse Recovery Fall Time ta 15 ns Reverse Recovery Rise Time tb 16 0.0085 0.012 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RU30L30M3 2 |
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