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RU30L30M3 Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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RU30L30M3 Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 8 page 
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ = 150 ºC TJ = 25 ºC 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (ºC) I D = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 VGS - Gate-to-Source Voltage (V) 024 6 8 10 12 14 16 18 20 TJ = 25 ºC TJ = 125 ºC 0 10 20 30 40 50 0.01 0.1 1.0 10 100 1000 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 0.1 1 10 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is Specified TA = 25 ºC Single Pulse 1 ms DC 10 s 100 ms 10ms 1 s Limited by RDS(on)* 100 µs BVDSS Limited E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RU30L30M3 4 |
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