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RU6H11R Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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RU6H11R Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10 - Temperature vs. Drain-to-Source Voltage Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case VSD, Source-Drain Voltage (V) 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 T J = 150 °C T J = 25 °C V GS = 0 V 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS- Drain -to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited by R DS(on)* 1 ms 10 ms 100 μs Operation in this Area Limited by R DS(on) TC = 25 °C TJ = 150 °C Single Pulse BVDSS Limited I DM = Limited TJ, Case Temperature (°C) 5 10 15 20 25 50 75 100 125 150 0 TJ, Junction Temperature (°C) - 60 0 160 - 40 - 20 20 40 60 80 100 120 140 600 625 650 675 700 725 750 775 800 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RU6H11R 4 |
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