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RU6H9R Datasheet(PDF) 6 Page - VBsemi Electronics Co.,Ltd

Part No. RU6H9R
Description  N-Channel 650V (D-S) Power MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU6H9R Datasheet(HTML) 6 Page - VBsemi Electronics Co.,Ltd

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Fig. 18 - For N-Channel
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS = 10 V
a
I
SD
Driver gate drive
D.U.T. l
SD waveform
D.U.T. V
DS waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
• I
SD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. V
GS = 5 V for logic level devices
V
DD
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU6H9R
6


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