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RU1H35L Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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RU1H35L Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
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3 / 8 page 
TYPICAL CHARACTERISTICS (25 °C, unless otherwise note) Output Characteristics Transconductance On-Resistance vs. Gate-to-Source Voltage 0 20 40 60 80 100 0 1234 5 VDS - Drain-to-Source Voltage (V) VGS =10 V thru8V VGS =6 V VGS =7 V 0 15 30 45 60 75 0 10203040 50 ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C 0.00 0.02 0.04 0.06 0.08 0.10 4567 8 910 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 150 °C ID =15A Transfer Characteristics On-Resistance vs. Drain Current Capacitance 0.0 0.4 0.8 1.2 1.6 2.0 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = - 55 °C TC = 25 °C 0.000 0.009 0.018 0.027 0.036 0 204060 80 100 ID - Drain Current (A) VGS =10 V Crss 0 700 1400 2100 2800 3500 020 40 60 80 100 Coss Ciss VDS - Drain-to-Source Voltage (V) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RU1H35L 3 |
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