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RU1H35L Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Part No. RU1H35L
Description  N-Channel 100-V (D-S) MOSFET
Download  8 Pages
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU1H35L Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise note)
Output Characteristics
Transconductance
On-Resistance vs. Gate-to-Source Voltage
0
20
40
60
80
100
0
1234
5
VDS - Drain-to-Source Voltage (V)
VGS =10 V thru8V
VGS =6 V
VGS =7 V
0
15
30
45
60
75
0
10203040
50
ID - Drain Current (A)
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.00
0.02
0.04
0.06
0.08
0.10
4567
8
910
VGS - Gate-to-Source Voltage (V)
TA = 25 °C
TA = 150 °C
ID =15A
Transfer Characteristics
On-Resistance vs. Drain Current
Capacitance
0.0
0.4
0.8
1.2
1.6
2.0
02
4
6
8
10
VGS - Gate-to-Source Voltage (V)
TC = 125 °C
TC = - 55 °C
TC = 25 °C
0.000
0.009
0.018
0.027
0.036
0
204060
80
100
ID - Drain Current (A)
VGS =10 V
Crss
0
700
1400
2100
2800
3500
020
40
60
80
100
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU1H35L
3


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