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RU1H35L Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Part No. RU1H35L
Description  N-Channel 100-V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU1H35L Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
100
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
110
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 12.5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.5
5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
1
µA
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
50
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
0.0185
Forward Transconductancea
gfs
VDS = 15 V, ID = 15 A
33
S
Dynamicb
Input Capacitance
Ciss
VDS = 50 V, VGS = 0 V, f = 1 MHz
2400
pF
Output Capacitance
Coss
230
Reverse Transfer Capacitance
Crss
80
Total Gate Charge
Qg
VDS = 50 V, VGS = 10 V, ID = 50 A
38
nC
Gate-Source Charge
Qgs
14
Gate-Drain Charge
Qgd
Gate Resistance
Rg
f = 1 MHz
1.6
2.5
Turn-On Delay Time
td(on)
VDD = 50 V, RL = 1 
ID  50 A, VGEN = 10 V, Rg = 1 
12
20
ns
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
18
35
Fall Time
tf
815
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
IS
TC = 25 °C
50
A
Pulse Diode Forward Currenta
ISM
100
Body Diode Voltage
VSD
IS = 15 A
0.85
1.5
V
Body Diode Reverse Recovery Time
trr
IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C
80
120
ns
Body Diode Reverse Recovery Charge
Qrr
160
240
nC
Reverse Recovery Fall Time
ta
57
ns
Reverse Recovery Rise Time
tb
23
70
12
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU1H35L
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