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RU1H35L Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part No. RU1H35L
Description  N-Channel 100-V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU1H35L Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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FEATURES
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
APPLICATIONS
Primary Side Switch
Isolated DC/DC Converter
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
a
Qg (Typ.)
100
0.0185 at VGS = 10 V
60
38 nC
S
GD
Top View
TO-252
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
60a
A
TC = 100 °C
45
TA = 25 °C
9.2b
TA = 100 °C
6.8b
Pulsed Drain Current
IDM
140
Continuous Source-Drain Diode Current
TC = 25 °C
IS
60a
TA = 25 °C
2b
Single Pulse Avalanche Current
L = 0.1 mH
IAS
45
Avalanche Energy
EAS
101
mJ
Maximum Power Dissipation
TC = 25 °C
PD
136.4
W
TC = 100 °C
68.2
TA = 25 °C
3b
TA = 100 °C
1.5b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb
Steady State
RthJA
40
50
°C/W
Maximum Junction-to-Case
RthJC
0.85
1.1
N-Channel 100-V (D-S) MOSFET
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU1H35L
1


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