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RU1H35L Datasheet(PDF) 6 Page - VBsemi Electronics Co.,Ltd

Part No. RU1H35L
Description  N-Channel 100-V (D-S) MOSFET
Download  8 Pages
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU1H35L Datasheet(HTML) 6 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Power Derating**, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
150
175
TA -Ambient Temperature (°C)
Power Derating**, Junction-to-Case
0
20
40
60
80
100
120
140
160
180
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU1H35L
6


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