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RTW060N03 Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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RTW060N03 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET •100 % Rg and UIS Tested APPLICATIONS • Notebook PC Core • VRM/POL Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 80 A. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a, e Qg (Typ.) 30 0.00 3 at VGS = 10 V 80 71 nC 0.00 5 at VGS = 4.5 V 70 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID 80a, e A TC = 70 °C 70e TA = 25 °C 21b, c TA = 70 °C 2 0.8b, c Pulsed Drain Current IDM 250 Avalanche Current Pulse L = 0.1 mH IAS 26 Single Pulse Avalanche Energy EAS 53.2 mJ Continuous Source-Drain Diode Current TC = 25 °C IS 80a, e A TA = 25 °C 2.76b, c Maximum Power Dissipation TC = 25 °C PD 2 10a W TC = 70 °C 1 55 TA = 25 °C 3. 35b, c TA = 70 °C 2. 13b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 10 s RthJA 41 50 °C/W Maximum Junction-to-Case Steady State RthJC 0. 7 0. 9 Top View 1 2 3 4 8 7 6 5 PIN1 DFN5X6 Top View Bottom View RTW060N03 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 1 |
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