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RTL030P02 Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part No. RTL030P02
Description  P-Channel 20 V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RTL030P02 Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
0.7
0.9
1.1
1.3
1.5
- 50
- 25
0
25
50
75
100
125
150
VGS = - 2.5 V;
ID =- 4.4 A
VGS =- 4.5 V; ID =- 5 A
T
J - Junction Temperature (°C)
0.02
0.04
0.06
0.08
0.10
123
45
ID =- 5 A
TJ =25 °C
TJ = 125 °C
V
GS - Gate-to-Source Voltage (V)
0
0.001
0.01
0.1
1
10
6
12
18
24
30
Time (s)
Source-Drain Diode Forward Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
00.5
1.0
TJ = 25 °C
TJ = 150 °C
V
SD - Source-to-Drain Voltage (V)
0.30
0.45
0.60
0.75
0.90
- 50
- 25
0
25
50
75
100
125
150
ID = - 250 μA
T
J - Temperature (°C)
100
1
0.1
1
10
100
0.01
10
0.1
TA =25 °C
Single Pulse
1s,10s
Limited by RDS(on)*
BVDSS Limited
1ms
100 μs
10 ms
DC
100 ms
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
E-mail:China@VBsemi TEL:86-755-83251052
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RTL030P02
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