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RTF015P02 Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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RTF015P02 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a Qg (Typ.) - 20 0.041 at VGS = - 4.5 V - 4 12.5 nC 0.054 at VGS = - 2.5 V - 4 0.100 at VGS = - 1.8 V - 4 SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View D D G D D S Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 4a A TC = 70 °C - 4 TA = 25 °C - 4a, b, c TA = 70 °C - 4a, b, c Pulsed Drain Current (t = 300 µs) IDM - 25 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.3 TA = 25 °C - 1.3b, c Maximum Power Dissipation TC = 25 °C PD 2.8 W TC = 70 °C 1.8 TA = 25 °C 1.6b, c TA = 70 °C 1.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 5 s RthJA 60 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 E-mail：China@VBsemi TEL:86-755-83251052 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RTF015P02 1 |
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