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RT4953 Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part No. RT4953
Description  Dual P-Channel 30-V (D-S) MOSFET
Download  9 Pages
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RT4953 Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
0.01
0.001
0.1
10
100
TJ = 150 °C
TJ = - 50 °C
TJ = 25 °C
VSD -Source-to-Drain Voltage (V)
- 0.2
0.0
0.2
0.4
0.6
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
ID =1mA
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
02
4
6
8
10
TJ = 25 °C
TJ = 125 °C
ID = -6 .3 A
VGS - Gate-to-Source Voltage (V)
0
20
40
60
80
100
0
1
1
1
0
0
.
00.01
Time (s)
0.1
Safe Operating Area
100
1
0.1
1
10
100
0.01
10
0.1
TA = 25 °C
Single Pulse
10 s
Limited byRDS(on)*
BVDSS Limited
1ms
100 µs
10 ms
1s,DC
100 ms
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RT4953
4


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