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RSS070P05-TB Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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RSS070P05-TB Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
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2 / 9 page 
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 40 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 36 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 5 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 1.2 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V - 1 µA VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 25 A Drain-Source On-State Resistancea RDS(on) VGS - 10 V, ID = - 10.2 A 0.01 0 VGS - 4.5 V, ID = - 8.4 A 0.01 4 Forward Transconductancea gfs VDS = - 15 V, ID = - 10.2 A 37 S Dynamicb Input Capacitance Ciss VDS = - 20 V, VGS = 0 V, f = 1 MHz 3007 pF Output Capacitance Coss 335 Reverse Transfer Capacitance Crss 291 Total Gate Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 10.2 A 64 95 nC VDS = - 20 V, VGS = - 4.5 V, ID = - 10.2 A 33 50 Gate-Source Charge Qgs 9.8 Gate-Drain Charge Qgd 15.7 Gate Resistance Rg f = 1 MHz 0.4 2 4 Turn-On Delay Time td(on) VDD = - 20 V, RL = 2.4 ID - 8.2 A, VGEN = - 4.5 V, Rg = 1 57 86 ns Rise Time tr 50 75 Turn-Off Delay Time td(off) 40 60 Fall Time tf 17 26 Turn-On Delay Time td(on) VDD = - 20 V, RL = 2.4 ID - 8.2 A, VGEN = - 10 V, Rg = 1 13 20 Rise Time tr 11 20 Turn-Off Delay Time td(off) 45 68 Fall Time tf 918 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 5.3 A Pulse Diode Forward Current ISM - 50 Body Diode Voltage VSD IS = - 8.2 A, VGS 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C 36 54 ns Body Diode Reverse Recovery Charge Qrr 41 62 nC Reverse Recovery Fall Time ta 20 ns Reverse Recovery Rise Time tb 16 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RSS070P05-TB 2 |
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