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RSS070P05TB Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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RSS070P05TB Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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P-Channel 40 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch •POL Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a Qg (Typ.) - 40 0.01 0 at VGS = - 10 V - 16.1 33 nC 0.0 14 at VGS = - 4.5 V - 13.3 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 16.1 A TC = 70 °C - 12.9 TA = 25 °C - 10.2b, c TA = 70 °C - 8.2b, c Pulsed Drain Current IDM - 50 Continous Source-Drain Diode Current TC = 25 °C IS - 5.3 TA = 25 °C - 2.1b, c Single Pulse Avalanche Current L = 0.1 mH IAS - 28 Single Pulse Avalanche Energy EAS 39 mJ Maximum Power Dissipation TC = 25 °C PD 6.3 W TC = 70 °C 4 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 10 s RthJA 37 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 16 20 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RSS070P05TB 1 |
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