![]() |
Electronic Components Datasheet Search |
|
RSS070N05TB1 Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
|
RSS070N05TB1 Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
3 / 9 page ![]() TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 5 V 4 V 3 V 0.004 0.009 0.014 0.019 0.024 0 10203040 50 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 5 10 15 20 25 30 35 VDS = 20 V ID = 12.4 A Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TC = 125 °C TC = 25 °C TC = - 55 °C 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 35 40 Coss Ciss VDS - Drain-to-Source Voltage (V) Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 12.4 A TJ - Junction Temperature (°C) E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RSS070N05TB1 3 |
|