![]() |
Electronic Components Datasheet Search |
|
RSS065N03-TB Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
|
RSS065N03-TB Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
4 / 9 page ![]() TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.005 0.010 0.015 0.020 0.025 0.030 02 4 6 8 10 TJ =25 °C TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 50 10 Time (s) 20 1 100 600 10 10-1 10-2 10-3 30 40 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 100 µA 1s 10 s Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RSS065N03-TB 4 |
|