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RSS060P05-TB Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Part No. RSS060P05-TB
Description  P-Channel 40 V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RSS060P05-TB Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 40
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 36
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
- 1.2
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 40 V, VGS = 0 V
- 1
µA
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
- 5
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
- 25
A
Drain-Source On-State Resistancea
RDS(on)
VGS - 10 V, ID = - 10.2 A
0.01
0
VGS - 4.5 V, ID = - 8.4 A
0.01
4
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 10.2 A
37
S
Dynamicb
Input Capacitance
Ciss
VDS = - 20 V, VGS = 0 V, f = 1 MHz
3007
pF
Output Capacitance
Coss
335
Reverse Transfer Capacitance
Crss
291
Total Gate Charge
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 10.2 A
64
95
nC
VDS = - 20 V, VGS = - 4.5 V, ID = - 10.2 A
33
50
Gate-Source Charge
Qgs
9.8
Gate-Drain Charge
Qgd
15.7
Gate Resistance
Rg
f = 1 MHz
0.4
2
4
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 2.4 
ID  - 8.2 A, VGEN = - 4.5 V, Rg = 1 
57
86
ns
Rise Time
tr
50
75
Turn-Off Delay Time
td(off)
40
60
Fall Time
tf
17
26
Turn-On Delay Time
td(on)
VDD = - 20 V, RL = 2.4 
ID  - 8.2 A, VGEN = - 10 V, Rg = 1 
13
20
Rise Time
tr
11
20
Turn-Off Delay Time
td(off)
45
68
Fall Time
tf
918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 5.3
A
Pulse Diode Forward Current
ISM
- 50
Body Diode Voltage
VSD
IS = - 8.2 A, VGS 0 V
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C
36
54
ns
Body Diode Reverse Recovery Charge
Qrr
41
62
nC
Reverse Recovery Fall Time
ta
20
ns
Reverse Recovery Rise Time
tb
16
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RSS060P05-TB
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