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RSS060P05TB Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part No. RSS060P05TB
Description  P-Channel 40 V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RSS060P05TB Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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P-Channel 40 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch
•POL
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()ID (A)
a
Qg (Typ.)
- 40
0.01
0 at VGS = - 10 V
- 16.1
33 nC
0.0
14 at VGS = - 4.5 V
- 13.3
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 40
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 16.1
A
TC = 70 °C
- 12.9
TA = 25 °C
- 10.2b, c
TA = 70 °C
- 8.2b, c
Pulsed Drain Current
IDM
- 50
Continous Source-Drain Diode Current
TC = 25 °C
IS
- 5.3
TA = 25 °C
- 2.1b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
- 28
Single Pulse Avalanche Energy
EAS
39
mJ
Maximum Power Dissipation
TC = 25 °C
PD
6.3
W
TC = 70 °C
4
TA = 25 °C
2.5b, c
TA = 70 °C
1.6b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
 10 s
RthJA
37
50
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
16
20
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RSS060P05TB
1


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