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MRF1517T1 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MRF1517T1
Description  The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF1517T1 Datasheet(HTML) 2 Page - Motorola, Inc

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MRF1517T1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
IDSS
1
µAdc
Gate–Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IGSS
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 120 µAdc)
VGS(th)
1.0
1.7
2.1
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.5
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
0.9
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
66
pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss
38
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
6
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps
10
11
dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η
50
55
%


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