IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGR 35N120B

IXGR 35N120C

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

30

40

S

Note1

C

ies

4620

pF

C

oes

V

260

pF

C

res

90

pF

Q

g

170

nC

Q

ge

I

28

nC

Q

gc

57

nC

t

d(on)

50

ns

t

ri

27

ns

t

d(off)

35N120B

180

280

ns

35N120C

150

220

ns

t

fi

35N120B

160

320

ns

35N120C

115

190

ns

E

off

35N120B

3.8

7.3

mJ

35N120C

3.0

4.2

mJ

t

d(on)

55

ns

t

ri

31

ns

E

on

2.6

mJ

t

d(off)

35N120B

300

ns

35N120C

220

ns

t

fi

35N120B

360

ns

35N120C

260

ns

E

off

35N120B

8.0

mJ

35N120C

6.2

mJ

R

thJC

0.5 K/W

R

thCK

0.15

K/W

Inductive load, T

°°°°C

I

I

V

V

Remarks: Switching times may

increase for V

V

higher T

Inductive load, T

°°°°C

I

I

V

V

Remarks: Switching times may

increase for V

CE

(Clamp) > 0.8 V

higher T

ISOPLUS 247 OUTLINE

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190 .205

A

1

2.29

2.54

.090 .100

A

2

1.91

2.16

.075 .085

b

1.14

1.40

.045 .055

b

1

1.91

2.13

.075 .084

b

2

2.92

3.12

.115 .123

C

0.61

0.80

.024 .031

D

20.80

21.34

.819 .840

E

15.75

16.13

.620 .635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780 .800

L1

3.81

4.32

.150 .170

Q

5.59

6.20

.220 .244

R

4.32

4.83

.170 .190

1 Gate, 2 Drain (Collector)

3 Source (Emitter)

4 no connection

Note: 1. Pulse test, t