SI6968DQ datasheet(2/4 Pages) VISHAY

Part #	SI6968DQ

Description	N-Channel 2.5-V (G-S) Battery Switch

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Vishay Siliconix

Si6968DQ

Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054

S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com

S-56943—Rev. E, 02-Nov-98

Siliconix was formerly a division of TEMIC Semiconductors

5-2

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

PARAMETER

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

STATIC

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 70_C

5

mA

On-State Drain CurrentA

ID(on)

VDS w 5 V, VGS = 4.5 V

30

A

Drain Source On State ResistanceA

r

VGS = 4.5 V, ID = 6.5 A

0.017

0.022

W

Drain-Source On-State ResistanceA

rDS(on)

VGS = 2.5 V, ID = 5.5 A

0.022

0.030

W

Forward TransconductanceA

gfs

VDS = 10 V, ID = 6.5 A

30

S

Diode Forward VoltageA

VSD

IS = 1.5 A, VGS = 0 V

0.66

1.2

V

DYNAMICB

Total Gate Charge

Qg

16

30

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 10 V, ID = 6.5 A

3.4

nC

Gate-Drain Charge

Qgd

4.0

Turn-On Delay Time

td(on)

20

40

Rise Time

tr

VDD = 10 V, RL = 10 W

48

80

Turn-Off Delay Time

td(off)

DD

L

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

90

180

ns

Fall Time

tf

55

110

Source-Drain Reverse Recovery Time

trr

IF = 1.5 A, di/dt = 100 A/ms

40

70

Notes

A.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

B.

Guaranteed by design, not subject to production testing.

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