1

Transistor

2SB1612

Silicon PNP epitaxial planer type

For low-frequency amplification

Complementary to 2SD2474

q

q

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Collector

EIAJ SC–62

3:Emitter

Mini Power Type Package

4.5

±0.1

3.0

±0.15

1.5

±0.1

0.4

±0.08

0.5

±0.08

1.5

±0.1

0.4

±0.04

1.6

±0.2

45

°

marking

321

Symbol

*

Ratings

–10

–10

–7

–2.4

–2

1

150

–55 ~ +150

Unit

V

V

V

A

A

W

˚C

˚C

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Conditions

min

–10

–10

–7

200

typ

– 0.19

60

100

max

–1

800

– 0.25

Unit

µA

V

V

V

V

MHz

pF

thickness of 1.7mm for the collector portion

Marking symbol :

2F