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2SC5954 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2SC5954
Description  Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC5954 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Power Transistors
1
Publication date: July 2004
SJD00319AED
2SC5954
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
■ Features
• High forward current transfer ratio h
FE which has satisfactory linearity.
• Low collector-emitter saturation voltage V
CE(sat)
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
9.9±0.3
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
6A
Collector power dissipation
PC
25
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 060
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 80 V, I
E
= 0
100
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 40 V, IB = 0
100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
100
µA
Forward current transfer ratio
hFE1 *
VCE
= 4 V, I
C
= 0.5 A
500
2 300
hFE2
VCE = 4 V, IC = 3 A
100
Collector-emitter saturation voltage
VCE(sat)
IC = 1 A, IB = 20 mA
0.6
V
Transition frequency
fT
VCE
= 10 V, I
C
= 0.1 A, f = 10 MHz
200
MHz
Turn-on time
ton
IC = 1 A, Resistance loaded
0.2
µs
Storage time
tstg
IB1 = 0.1 A, IB2 = − 0.1 A
1.5
µs
Fall time
tf
VCC
= 50 V
0.1
µs
Rank
Q
P
hFE1
500 to 1 500
1 300 to 2 300
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Internal Connection
B
C
E


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