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R6004KNJ Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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R6004KNJ Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor R6004KNJ FEATURES · Drain Current –ID= 4A@ TC=25℃ · Drain Source Voltage- : VDSS=600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 980mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 58 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.2 ℃ /W |
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