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IXFK24N120Q2 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFK24N120Q2
Description  HiPerFET Power MOSFETs Q-Class
Download  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFK24N120Q2 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J = 25°C to 150°C
1200
V
V
DGR
T
J = 25°C to 150°C; RGS = 1 MΩ
1200
V
V
GS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C = 25°C24
A
I
DM
T
C = 25°C, pulse width limited by TJM
96
A
I
AR
T
C = 25°C12
A
E
AR
T
C = 25°C30
mJ
E
AS
T
C = 25°C
4.0
J
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
20
V/ns
T
J ≤ 150°C, RG = 2 Ω
P
D
T
C = 25°C
830
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°C
M
d
Mounting torque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
6
g
TO-264
10
g
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g, low trr
Features
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = 3mA
1200
V
V
GS(th)
V
DS = VGS, ID = 8 mA
2.5
5.0
V
I
GSS
V
GS = ±30 VDC, VDS = 0
±200 nA
I
DSS
V
DS = VDSS
T
J =
25
°C50 µA
V
GS = 0 V
T
J = 125°C2
mA
R
DS(on)
V
GS = 10 V, ID = 0.5 • ID25
0.65
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
G = Gate
D = Drain
S = Source
TAB = Drain
DS99185(05/04)
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
= 1200 V
I
D25
=
24 A
R
DS(on) =
0.65
t
rr
≤≤≤≤ 300 ns
IXFK 24N120Q2
IXFX 24N120Q2
PLUS 247TM (IXFX)
G
D
D (TAB)
Preliminary Data Sheet
Advance Technical Data


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