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K4E660411D-JC50 Datasheet(PDF) 4 Page - Samsung semiconductor |
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K4E660411D-JC50 Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 21 page CMOS DRAM K4E660411D, K4E640411D *Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one EDO mode cycle time, tHPC. DC AND OPERATING CHARACTERISTICS (Continued) ICC1* : Operating Current (RAS and CAS, Address cycling @ tRC=min.) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @ tRC=min.) ICC4* : Extended Data Out Mode Current (RAS=VIL, CAS, Address cycling @ tHPC=min.) ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @ tRC=min) Symbol Power Speed Max Units K4E660411D K4E640411D ICC1 Don ′t care -50 -60 90 80 120 110 mA mA ICC2 Normal Don ′t care 2 2 mA ICC3 Don ′t care -50 -60 90 80 120 110 mA mA ICC4 Don ′t care -50 -60 100 90 110 100 mA mA ICC5 Normal Don ′t care 1 1 mA ICC6 Don ′t care -50 -60 120 110 120 110 mA mA |
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