PMEG1020EJ datasheet(3/9 Pages) PHILIPS

Part #	PMEG1020EJ

Description	10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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9397 750 14929

Product data sheet

Rev. 03 — 14 April 2005

3 of 9

Philips Semiconductors

PMEG1020EH; PMEG1020EJ

10 V, 2 A ultra low VF MEGA Schottky barrier rectiﬁers

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

For Schottky barrier rectiﬁers thermal run-away has to be considered, as in some applications the reverse

power losses PR are a signiﬁcant part of the total power losses. Nomograms for determining the reverse

power losses PR and IF(AV) rating are available on request.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4]

Soldering point of cathode tab.

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 6:

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from junction

to ambient

in free air

PMEG1020EH

[1] [2] -

-

330

K/W

[2] [3] -

-

150

K/W

PMEG1020EJ

[1] [2] -

-

350

K/W

[2] [3] -

-

150

K/W

Rth(j-sp)

thermal resistance from junction

to solder point

[4]

PMEG1020EH

-

60

K/W

PMEG1020EJ

-

55

K/W

Table 8:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF = 0.01 A

[1] -

100

130

mV

IF = 0.1 A

[1] -

170

200

mV

IF =1A

[1] -

280

350

mV

IF =2A

[1] -

350

460

mV

IR

reverse current

VR = 5 V

-

0.7

2

mA

VR = 8 V

-

1

2.5

mA

VR = 10 V

-

1.2

3

mA

Cd

diode capacitance

VR = 5 V; f = 1 MHz

-

40

50

pF

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