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JUL-08-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6503NJ
TSOPJW-8
NIKO-SEM
Turn-On Delay Time
2
td(on)
N-Ch
P-Ch
7
8
11
12
Rise Time
2
tr
N-Ch
P-Ch
12
11
18
18
Turn-Off Delay Time
2
td(off)
N-Ch
P-Ch
12
14
18
21
Fall Time
2
tf
N-Channel
VDS = 15V, RL = 15Ω
ID ≅ 1A, VGS = 10V, RGEN = 6Ω
P-Channel
VDS = -15V, RL = 15Ω
ID ≅ -1A, VGS = -10V, RGEN = 6Ω
N-Ch
P-Ch
7
8
11
12
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
IF = 0.9A, VGS = 0V
Forward Voltage
1
VSD
IF = -0.9A, VGS = 0V
N-Ch
P-Ch
1.2
-1.2
V
IF = 0.9A, dlF/dt = 100A / µS
Reverse Recovery Time
trr
IF = -0.9A, dlF/dt = 100A / µS
N-Ch
P-Ch
40
40
80
80
nS
1Pulse test : Pulse Width
≤ 300 µsec, Duty Cycle ≤ 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REMARK: THIS PRODUCT MARKED WITH “50YWW”
50YWW
Marking Description:
5 - N+P MOSFET
0 - Serial Number
Y - Year
W - Week
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