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IRHNA93260 Datasheet(PDF) 1 Page - International Rectifier |
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IRHNA93260 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page Absolute Maximum Ratings Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -29 ID @ VGS = -12V, TC = 100°C Continuous Drain Current -18 IDM Pulsed Drain Current ➀ -116 PD @ TC = 25°C Max. Power Dissipation 300 W Linear Derating Factor 2.4 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 500 mJ IAR Avalanche Current ➀ -29 A EAR Repetitive Avalanche Energy ➀ 30 mJ dv/dt Peak Diode Recovery dv/dt ➂ -20 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 3.3 (Typical) g Pre-Irradiation International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This tech- nology has over a decade of proven performance and reliability in satellite applications. These de- vices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These de- vices retain all of the well established advantages of MOSFETs such as voltage control, fast switch- ing, ease of paralleling and temperature stability of electrical parameters. oC A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 11/21/00 www.irf.com 1 For footnotes refer to the last page Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA9260 100K Rads (Si) 0.154 Ω -29A JANSR2N7426U IRHNA93260 300K Rads (Si) 0.154 Ω -29A JANSF2N7426U SMD-2 Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard ™ HEXFET ® TECHNOLOGY PD - 93969 |
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