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AM4494N Datasheet(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AM4494N Datasheet(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
4 / 4 page Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance -50 0 50 100 150 100 105 110 115 120 T j, Junction temperature (℃) I D = 250 μA V GS = 0 V -50 0 50 100 150 0.0 5.0 10.0 15.0 20.0 I D = 12 A V GS = 10 V T j, Junction Temperature (℃) Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 T j = 25 ℃ V SD, Source-Drain voltage (V) 50 100 150 200 0.0 10.0m 20.0m 30.0m 40.0m 50.0m 10 V 6.5 V 6 V 5.5 V 5 V V GS=4 V 4.5 V I D, Drain current(A) 0.1 1 10 100 0.01 0.1 1 10 100 V DS, Drain-source voltage(V) 10 μs DC 10 ms 1 ms 100 μs R DS(ON) Limited 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 T C, Case Temperature (℃) AM4494N Figure 9, Drain current Figure 10, Safe operation area TC=25 ℃ — 4 — 0086-0755-8278-9056 www.doingter.cn |
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