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AM90N08-05P Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part No. AM90N08-05P
Description  N-Channel MOSFET uses advanced trench technology
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AM90N08-05P Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
80
88
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=80V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
3
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=20A
---
3.7
4.7
GFS
Forward Transconductance
VDS=5V, ID=20A
60
---
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
6500
---
pF
Coss
Output Capacitance
---
810
---
Crss
Reverse Transfer Capacitance
---
310
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDD=40V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
---
31.5
---
ns
tr
Rise Time
---
33
---
ns
td(off)
Turn-Off Delay Time
---
46
---
ns
tf
Fall Time
---
17.5
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=40V,
ID=20A
---
130
---
nC
Qgs
Gate-Source
Charge
---
36
---
nC
Qgd
Gate-Drain “Miller” Charge
---
46
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=40A
---
---
1.2
V
AM90N08-05P
Electrical Characteristics:(T
C=25unless otherwise noted)


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