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2SA719 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2SA719
Description  Silicon PNP epitaxial planer type(For low-frequency power amplification and driver amplification)
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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2SA719 Datasheet(HTML) 1 Page - Panasonic Semiconductor

   
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1
Transistor
2SA719, 2SA720
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317 and 2SC1318
s Features
q
Complementary pair with 2SC1317 and 2SC1318.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±0.2
4.0
±0.2
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
1.27
2.54
±0.15
2
13
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1
–500
625
150
–55 ~ +150
Unit
V
V
V
A
mA
mW
˚C
˚C
2SA719
2SA720
2SA719
2SA720
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1
*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –10mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–30
–60
–25
–50
–5
85
40
typ
– 0.35
–1.1
200
6
max
– 0.1
340
– 0.6
–1.5
15
Unit
µA
V
V
V
V
V
MHz
pF
2SA719
2SA720
2SA719
2SA720
*h
FE1 Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340


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