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NCE01P18K Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Part No. NCE01P18K
Description  P-Channel 100 V (D-S) MOSFET
Download  8 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

NCE01P18K Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
Transfer Characteristics
Transconductance
0
10
20
30
40
50
012
34
VGS =10Vthru5V
VGS =4 V
VDS - Drain-to-Source Voltage (V)
VGS =3 V
0.0
0.4
0.8
1.2
1.6
2.0
012
34
TC = 25 °C
TC =125 °C
TC = - 55 °C
VGS - Gate-to-Source Voltage (V)
0
5
10
15
20
25
0
3
6
9
12
15
ID - Drain Current (A)
TC = 125 °C
TC = - 55 °C
TC = 25 °C
On-Resistance vs. Drain Current
On-Resistance vs. Gate-to-Source Voltage
Gate Charge
0.05
0.10
0.15
0.20
0.25
0
3
6
9
12
15
VGS =4.5 V
VGS =10V
ID - Drain Current (A)
0.00
0.15
0.30
0.45
0.60
02
4
6
8
10
TJ = 25 °C
TJ = 150 °C
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
0
5
10
15
20
25
VDS =80V
ID =3.6 A
VDS =50V
VDS =25V
Qg - Total Gate Charge (nC)
NCE01P18K
3
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


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