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NCE01P18K Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Part No. NCE01P18K
Description  P-Channel 100 V (D-S) MOSFET
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

NCE01P18K Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = - 250 µA
- 100
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1
- 2.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 250
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 100 V, VGS = 0 V
- 1
µA
VDS = - 100 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 100 V, VGS = 0 V, TJ = 150 °C
- 250
On-State Drain Currenta
ID(on)
VDS ≤ - 10 V, VGS = - 10 V
- 15
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 3.6 A
0.100
Ω
VGS = - 4.5 V, ID = - 3.4 A
0.120
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 3.6 A
12
S
Dynamicb
Input Capacitance
Ciss
VGS = 0 V, VDS = - 50 V, f = 1 MHz
1055
pF
Output Capacitance
Coss
65
Reverse Transfer Capacitance
Crss
41
Total Gate Chargec
Qg
VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A
23.2
34.8
nC
VDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A
11.7
17.6
Gate-Source Chargec
Qgs
3.5
Gate-Drain Chargec
Qgd
4.8
Gate Resistance
Rg
f = 1 MHz
1.2
5.7
11.5
Ω
Turn-On Delay Timec
td(on)
VDD = - 50 V, RL = 17.2 Ω
ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω
714
ns
Rise Timec
tr
12
18
Turn-Off Delay Timec
td(off)
33
50
Fall Timec
tf
918
Drain-Source Body Diode Ratings and Characteristics TC = 25 °C
b
Continuous Current
IS
- 8.8
A
Pulsed Current
ISM
- 15
Forward Voltagea
VSD
IF = - 2.9 A, VGS = 0 V
- 0.8
- 1.5
V
Reverse Recovery Time
trr
IF = - 2.9 A, dI/dt = 100 A/µs
50
75
ns
Peak Reverse Recovery Current
IRM(REC)
- 4
- 6
A
Reverse Recovery Charge
Qrr
98
147
nC
NCE01P18K
2
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


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