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NCE01P18K Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part No. NCE01P18K
Description  P-Channel 100 V (D-S) MOSFET
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

NCE01P18K Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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P-Channel 100 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Power Switch
DC/DC Converters
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
Qg (Typ.)
- 100
GS = - 10 V
- 16
11.7
0.120 at VGS = - 4.5 V
- 15
TO-252
S
GD
Top View
Drain Connected to Tab
S
G
D
P-Channel MOSFET
Notes:
a. Duty cycle
≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 16
A
TC = 70 °C
- 14
Pulsed Drain Current
IDM
- 50
Avalanche Current
IAS
- 18
Single Avalanche Energya
L = 0.1 mH
EAS
16.2
mJ
Maximum Power Dissipationa
TC = 25 °C
PD
32.1b
W
TA = 25 °C
c
2.5
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (PCB Mount)c
RthJA
50
°C/W
Junction-to-Case (Drain)
RthJC
3.9
0.100 at V
NCE01P18K
1
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


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