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SI6552DQ Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI6552DQ
Description  Dual N- and P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI6552DQ Datasheet(HTML) 4 Page - Vishay Siliconix

   
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Si6552DQ
Vishay Siliconix
www.vishay.com
2-4
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
1.25
1.50
0.040
0.050
0.060
0.070
0.080
0.090
0.100
02468
- 1.0
- 0.5
0.0
0.5
1.0
- 50
- 25
0
25
50
75
100
125
150
2
1
0.1
0.01
10-4
10-3
10-2
10-1
110
30
1
10
30
ID = 2.8 A
ID = 250 µA
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.001
0
0.1
20
25
5
10
15
110
30
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 125_C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (_C)
Time (sec)
TJ = 25_C
TJ = 150_C
0.01
20
0.00
0.25
0.50
0.75
1.00


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