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SI6552DQ Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. SI6552DQ
Description  Dual N- and P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI6552DQ Datasheet(HTML) 3 Page - Vishay Siliconix

   
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Si6552DQ
Vishay Siliconix
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
0
4
8
12
16
20
0
2468
10
0
1
2
3
4
5
04
8
12
16
20
0.0
0.4
0.8
1.2
1.6
2.0
- 50
- 25
0
25
50
75
100
125
150
0.00
0.05
0.10
0.15
0.20
0
2468
10
0
300
600
900
1200
1500
0
246
8
10
12
0
4
8
12
16
20
01234
VGS = 8 thru 3 V
1 V
2 V
VGS = 4.5 V
VGS = 2.5 V
VDS = 10 V
ID = 2.8 A
VGS = 4.5 V
IDS = 2.8 A
Crss
Coss
Ciss
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
TC = - 55_C
125
_C
25
_C


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