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SI6552DQ Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI6552DQ
Description  Dual N- and P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI6552DQ Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Si6552DQ
Vishay Siliconix
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
www.vishay.com
2-1
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
N-Channel
20
0.08 @ VGS = 4.5 V
"2.8
N-Channel
20
0.11 @ VGS = 2.5 V
"2.1
P Channel
12
0.1 @ VGS = - 4.5 V
"2.5
P-Channel
-12
0.18 @ VGS = - 2.5 V
"1.9
S2
G2
D2
P-Channel MOSFET
D1
G1
S1
N-Channel MOSFET
Si6552DQ
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
TSSOP-8
Top View
D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
-12
V
Gate-Source Voltage
VGS
"8
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
"2.8
"2.5
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
"2.3
"2.0
A
Pulsed Drain Current
IDM
"20
A
Continuous Source Current (Diode Conduction)a
IS
1.0
- 1.0
Maximum Power Dissipationa
TA = 25_C
PD
1.0
W
Maximum Power Dissipationa
TA = 70_C
PD
0.64
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N- or P-Channel
Unit
Maximum Junction-to-Ambienta
RthJA
125
_C/W
Notes
a.
Surface Mounted on FR4 Board, t
v 10 sec.


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