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SI6552DQ Datasheet(PDF) 5 Page - Vishay Siliconix

Part No. SI6552DQ
Description  Dual N- and P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI6552DQ Datasheet(HTML) 5 Page - Vishay Siliconix

   
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Si6552DQ
Vishay Siliconix
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
www.vishay.com
2-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
0
4
8
12
16
20
0
2468
10
0
2
4
6
8
0
3
6
9
12
15
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
0.00
0.05
0.10
0.15
0.20
0.25
0
2468
10
0
300
600
900
1200
1500
0
246
8
10
12
0
2
4
6
8
10
01234
VGS = 8, 7, 6, 5, 4 V
2 V
VGS = 2.5 V
VGS = 4.5 V
ID = 2.5 A
VGS = 4.5 V
ID = 2.5 A
Crss
Ciss
Coss
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
-55
_C
TC = 125_C
25
_C
VGS = 4.5 V
3 V


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