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TL062 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. TL062
Description  LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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TL062 Datasheet(HTML) 3 Page - ON Semiconductor

 
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TL062 TL064
3
MOTOROLA ANALOG IC DEVICE DATA
DC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = Tlow to Thigh [Note 4], unless otherwise noted.)
TL062V
TL064V
Characteristics
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Input Offset Voltage (RS = 50 Ω, VO = 0V)
TA = 25°C
TA = Tlow to Thigh
VIO
3.0
6.0
9.0
3.0
9.0
15
mV
Average Temperature Coefficient for Offset Voltage
(RS = 50 Ω, VO = 0 V)
∆VIO/∆T
10
10
µV/°C
Input Offset Current (VCM = 0 V, VO = 0 V)
TA = 25°C
TA = Tlow to Thigh
IIO
5.0
100
20
5.0
100
20
pA
nA
Input Bias Current (VCM = 0 V, VO = 0 V)
TA = 25°C
TA = Tlow to Thigh
IIB
30
200
50
30
200
50
pA
nA
Input Common Mode Voltage Range (TA = 25°C)
VICR
–11.5
+14.5
–12.0
+11.5
–11.5
+14.5
–12.0
+11.5
V
Large Signal Voltage Gain (RL = 10 kΩ, VO = ±10 V)
TA = 25°C
TA = Tlow to Thigh
AVOL
4.0
4.0
58
4.0
4.0
58
V/mV
Output Voltage Swing (RL = 10 kΩ, VID = 1.0 V)
TA = 25°C
TA = Tlow to Thigh
VO+
VO–
VO+
VO–
+10
+10
+14
–14
–10
–10
+10
+10
+14
–14
–10
–10
V
Common Mode Rejection
(RS = 50 Ω, VCM = VICR min, VO = 0, TA = 25°C)
CMR
80
84
80
84
dB
Power Supply Rejection
(RS = 50 Ω, VCM = 0 V, VO = 0, TA = 25°C)
PSR
80
86
80
86
dB
Power Supply Current (each amplifier)
(No Load, VO = 0 V, TA = 25°C)
ID
200
250
200
250
µA
Total Power Dissipation (each amplifier)
(No Load, VO = 0 V, TA = 25°C)
PD
6.0
7.5
6.0
7.5
mW
NOTE:
4. Tlow = –40°CThigh = +85°C for TL062,4V
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = +25°C, unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
Slew Rate (Vin = –10 V to +10 V, RL = 10 kΩ, CL = 100 pF, AV = +1.0)
SR
2.0
6.0
V/
µs
Rise Time (Vin = 20 mV, RL = 10 kΩ, CL = 100 pF, AV = +1.0)
tr
0.1
µs
Overshoot (Vin = 20 mV, RL = 10 kΩ, CL = 100 pF, AV = +1.0)
OS
10
%
Settling Time
(VCC = +15 V, VEE = –15 V, AV = –1.0,
To within 10 mV
RL = 10 kΩ, VO = 0 V to +10 V step)
To within 1.0 mV
tS
1.6
2.2
µs
Gain Bandwidth Product (f = 200 kHz)
GBW
2.0
MHz
Equivalent Input Noise (RS = 100 Ω, f = 1.0 kHz)
en
47
nV/ Hz
Input Resistance
Ri
1012
W
Channel Separation (f = 10 kHz)
CS
120
dB


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