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SCP25C60 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. SCP25C60
Description  Silicon Controlled Rectifiers
Download  5 Pages
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Maker  ETC1 [List of Unclassifed Manufacturers]
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SCP25C60 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

   
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Absolute Maximum Ratings ( T
J = 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(AV)
Average On-State Current
Half Sine Wave : TC = 97 °C
16
A
IT(RMS)
R.M.S On-State Current
180° Conduction Angle
25
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
275
A
I2t
I2t for Fusing
t = 8.3ms
380
A2s
di/dt
Critical rate of rise of on-state current
50
A/
PGM
Forward Peak Gate Power Dissipation
20
W
PG(AV)
Forward Average Gate Power Dissipation
1
W
IFGM
Forward Peak Gate Current
5
A
VRGM
Reverse Peak Gate Voltage
5.0
V
TJ
Operating Junction Temperature
- 40 ~ 125
°C
TSTG
Storage Temperature
- 40 ~ 150
°C
SCP25C60
Aug, 2003. Rev. 2
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 25 A )
Low On-State Voltage (1.3V(Typ.)@ ITM)
Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
3. Gate
1. Cathode
Symbol
1/5
SemiWell Semiconductor
Silicon Controlled Rectifiers
TO-220
1
2
3
2. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.


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