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TIP3055 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. TIP3055
Description  POWER TRANSISTORS COMPLEMENTARY SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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TIP3055 Datasheet(HTML) 2 Page - ON Semiconductor

   
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TIP3055 TIP2955
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
60
Vdc
Collector Cutoff Current
(VCE = 70 Vdc, RBE = 100 Ohms)
ICER
1.0
mAdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
0.7
mAdc
Collector Cutoff Current
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
ICEV
5.0
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
5.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
70
Collector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
1.1
3.0
Vdc
Base–Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.8
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 30 Vdc, t = 1.0 s; Nonrepetitive)
Is/b
3.0
Adc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
MHz
Small–Signal Current Gain
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
hfe
15
kHz
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle v 2.0%.
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
10
5.0
0.1
0.3
2.0
3.0
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
2.0
4.0
6.0
10
20
0.2
0.5
1.0
20
30
50
100
40
60
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
TJ = 150°C
300
µs
1.0 ms
10 ms
dc
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature.


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