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TIP3055 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. TIP3055
Description  POWER TRANSISTORS COMPLEMENTARY SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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TIP3055 Datasheet(HTML) 1 Page - ON Semiconductor

   
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Motorola Bipolar Power Transistor Device Data
Complementary Silicon Power
Transistors
. . . designed for general–purpose switching and amplifier applications.
• DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc
• Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc
• Excellent Safe Operating Area
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
60
Vdc
Collector–Emitter Voltage
VCER
70
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
IC
1 5
Adc
Base Current
IB
7.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
90
0.72
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.39
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
35.7
_C/W
TIP3055
TIP2955
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.1
100
1000
10
1.0
2.0
0.3
7.0
10
VCE = 4.0 V
TJ = 25°C
0.2
0.5 0.7
3.0
5.0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP3055/D
© Motorola, Inc. 1996
TIP3055
TIP2955
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
90 WATTS
NPN
PNP
CASE 340D–02
REV 1


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