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TIP29B Datasheet(PDF) 2 Page - ON Semiconductor

Part No. TIP29B
Description  POWER TRANSISTORS COMPLEMENTARY SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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TIP29B Datasheet(HTML) 2 Page - ON Semiconductor

   
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TIP29B TIP29C TIP30B TIP30C
2
Motorola Bipolar Power Transistor Device Data
0.03
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.03
0.5
5.0
70
3.0
100
7.0
300
30
0.1
0.3
0.07
1.0
TJ = 150°C
25
°C
– 55
°C
VCE = 2.0 V
500
10
50
3.0
Figure 2. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
IB1 = IB2
IC/IB = 10
ts′ = ts – 1/8 tf
TJ = 25°C
ts′
TURN–ON PULSE
APPROX
+11 V
Vin 0
VEB(off)
t1
APPROX
+11 V
Vin
t2
TURN–OFF PULSE
t3
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
DUTY CYCLE
≈ 2.0%
APPROX – 9.0 V
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
– 4.0 V
Figure 3. Switching Time Equivalent Circuit
0.03
Figure 4. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.1
3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25°C
tr @ VCC = 10 V
0.5
0.3
0.1
0.05
0.05
0.3
0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
0.07
0.7
tr @ VCC = 30 V
0.05
0.7
tf @ VCC = 10 V
tf @ VCC = 30 V
0.07
1.0
0.5
0.3
0.1
0.05
0.03
0.7
2.0
0.2
0.1
3.0
1.0
0.05
0.3
0.5
0.07
0.7
2.0
0.2
Figure 5. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE, (VOLTS)
10
0.1
10
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
1.0
20
100
40
3.0
4.0
0.1
TIP29B, 30B
TIP29C, 30C
TJ = 150°C
CURVES APPLY BELOW
RATED VCEO
1 ms
dc
5 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE opera-
tion; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.


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