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TIP29B Datasheet(PDF) 1 Page - ON Semiconductor

Part No. TIP29B
Description  POWER TRANSISTORS COMPLEMENTARY SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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TIP29B Datasheet(HTML) 1 Page - ON Semiconductor

   
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Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
Compact TO–220 AB package.
MAXIMUM RATINGS
Rating
Symbol
TIP29B
TIP30B
TIP29C
TIP30C
Unit
Rating
Symbol
TIP30B
TIP30C
Unit
Collector–Emitter Voltage
VCEO
80
100
Vdc
Collector–Base Voltage
VCB
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
1.0
3.0
Adc
Base Current
IB
0.4
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
30
0.24
Watts
W/
_C
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
2.0
0.016
Watts
W/
_C
Unclamped Inductive Load Energy
(See Note 3)
E
32
mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
Thermal Resistance, Junction to Case
R
θJC
4.167
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
TIP29B, TIP30B
(IC = 30 mAdc, IB = 0)
TIP29C, TIP30C
VCEO(sus)
80
100
Vdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
ICEO
0.3
mAdc
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
TIP29B, TIP30B
(VCE = 100 Vdc, VEB = 0)
TIP29C, TIP30C
ICES
200
200
µAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
hFE
40
15
75
Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)
VCE(sat)
0.7
Vdc
Base–Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.3
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
MHz
Small–Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2.0%.
(2) fT = hfe• ftest.
(3) This rating based on testing with LC = 20 mH, RBE = 100 Ω, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP29B/D
© Motorola, Inc. 1995
TIP29B
TIP29C
TIP30B
TIP30C
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80 – 100 VOLTS
30 WATTS
NPN
PNP
CASE 221A–06
TO–220AB
REV 1


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