TIP112 datasheet(2/6 Pages) ONSEMI

Part #	TIP112

Description	Plastic Medium-Power Complementary Silicon Transistors

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TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

TIP110, TIP115

TIP111, TIP116

TIP112, TIP117

VCEO(sus)

60

80

100

—

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP110, TIP115

(VCE = 40 Vdc, IB = 0)

TIP111, TIP116

(VCE = 50 Vdc, IB = 0)

TIP112 ,TIP117

ICEO

—

2.0

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

TIP110, TIP115

(VCB = 80 Vdc, IE = 0)

TIP111, TIP116

(VCB = 100 Vdc, IE = 0)

TIP112, TIP117

ICBO

—

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

—

2.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

hFE

1000

500

—

Collector–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

VCE(sat)

—

2.5

Vdc

Base–Emitter On Voltage

(IC = 2.0 Adc, VCE = 4.0 Vdc)

VBE(on)

—

2.8

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

hfe

25

—

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

Cob

—

200

100

pF

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

Figure 2. Switching Times Test Circuit

4.0

0.04

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.8

0.2

0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

0.6

PNP

NPN

tf

tr

ts

td @ VBE(off) = 0

V2

approx

+ 8.0 V

V1

approx

–12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25

µs

0

RB

51

D1

+ 4.0 V

VCC

– 30 V

RC

TUT

≈ 8.0 k

≈ 60

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

0.4

IB1 = IB2

TJ = 25°C

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